The development of an optimized air or O2-assisted multi-wall vertically aligned carbon nanotubes (VACNT) process that adjusts the vertical height profile of a standard H2O vapor-assisted VACNT process is reported. The effect of the air or O2 chemical vapor deposition (CVD) precursor flow rate, the catalytic Fe layer thickness, the process growth temperature, and the H2/C2H4 ratio on VACNT length was first investigated to find the optimum growth conditions. Spatial distribution height mapping of VACNT structures on six patterned 4′′ catalyst Si wafers prepared with a 70−90 min long O2-assisted growth step shows an average growth height of 1.8−2.2 mm, with a standard deviation of less than 10%. Characterization techniques included Raman spectroscopy, scanning electron microscopy (SEM), and spatial height mapping analysis for a range of Fluid channel Array Brick (FAB) components with a length of 30 mm, a width range of 2.5−15 mm, a fluid channel diameter range of d = 5−100 mm, and a flui... [more]

The nickel-based catalyst was more active in the reverse water-gas shift reaction, but it is easy to sinter and deactivate in high temperature reaction (≥600 °C). A urea-assisted impregnation method was utilized to create a Ni/SiO2-N catalyst to increase the catalytic stability of Ni-based catalysts. For at least 20 h, the Ni/SiO2-N catalyst in the reverse water-gas shift process at 700 °C remained stable, and in the high temperature RWGS reaction, the conversion rate of CO2 of the catalyst is close to the equilibrium conversion rate. The catalysts were characterized by BET, XRD, H2-TPR, and TEM, and the results demonstrate that the Ni particles had a small particle size and exhibited strong interaction with the SiO2 support in the Ni/SiO2-N catalyst, which led to the catalyst’s good activity and stability. Urea-assisted impregnation is a facile method to prepare stable Ni/SiO2 catalysts with high Ni dispersion.