LAPSE:2023.4032
Published Article
LAPSE:2023.4032
Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account
February 22, 2023
In this article the problem of modelling a switching process of Insulated Gate Bipolar Transistors (IGBTs) in the SPICE software is considered. The new form of the considered transistor model is presented. The model includes controlled voltage and current sources, resistors and voltage sources. In the model, influence of temperature on dc and dynamic characteristics of the IGBT is taken into account. A detailed description of the dynamic part of this model is included in the article and some results of experimental verification are shown. Verification is performed for a transistor IRG4PC40UD by International Rectifier. The presented results of computations and measurements show clearly influence of temperature on on-time and off-time, and additionally switching energy losses are observed. Moreover, the results of investigations performed with the use of the new model are compared to the results of computations performed with classical models of the considered device given in the literature. It is proved that the new model makes it possible to obtain a better match to the results of measurements than the considered models described in the literature.
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Keywords
IGBT, Modelling, power semiconductor devices, SPICE, switching, thermal phenomena, transient analysis
Subject
Suggested Citation
Górecki P, Górecki K. Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account. (2023). LAPSE:2023.4032
Author Affiliations
Journal Name
Energies
Volume
12
Issue
10
Article Number
E1894
Year
2019
Publication Date
2019-05-18
Published Version
ISSN
1996-1073
Version Comments
Original Submission
Other Meta
PII: en12101894, Publication Type: Journal Article
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LAPSE:2023.4032
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doi:10.3390/en12101894
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[v1] (Original Submission)
Feb 22, 2023
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Feb 22, 2023
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