LAPSE:2023.4577
Published Article
LAPSE:2023.4577
Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain
February 23, 2023
Abstract
The electrical performance of the back-channel etched Indium−Gallium−Zinc−Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using a non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compared the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibit good electrical properties, as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 × 10−6 A. We patterned all the layers by a photolithography process. Finally, we introduced a SiO2-ESL layer to protect the device from external influence. The results show that the prevention of Cu and the introduced ESL layer enhances the electrical properties of IGZO TFTs.
The electrical performance of the back-channel etched Indium−Gallium−Zinc−Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using a non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compared the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibit good electrical properties, as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 × 10−6 A. We patterned all the layers by a photolithography process. Finally, we introduced a SiO2-ESL layer to protect the device from external influence. The results show that the prevention of Cu and the introduced ESL layer enhances the electrical properties of IGZO TFTs.
Record ID
Keywords
barrier layer, Cu thermal diffusion, DC sputtering, IGZO TFTs, selective etching of Cu
Subject
Suggested Citation
Khan R, Misran MAB, Ohtaki M, Song JT, Ishihara T, Hattori R. Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain. (2023). LAPSE:2023.4577
Author Affiliations
Khan R: Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan; Transdisciplinary Research and Education Center for Green Technologies, Kyushu University, [ORCID]
Misran MAB: Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan; Transdisciplinary Research and Education Center for Green Technologies, Kyushu University,
Ohtaki M: Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan; Transdisciplinary Research and Education Center for Green Technologies, Kyushu University,
Song JT: Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Fukuoka 819-0395, Japan; WPI, International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395, Japan
Ishihara T: Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Fukuoka 819-0395, Japan; WPI, International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395, Japan
Hattori R: Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
Misran MAB: Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan; Transdisciplinary Research and Education Center for Green Technologies, Kyushu University,
Ohtaki M: Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan; Transdisciplinary Research and Education Center for Green Technologies, Kyushu University,
Song JT: Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Fukuoka 819-0395, Japan; WPI, International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395, Japan
Ishihara T: Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Fukuoka 819-0395, Japan; WPI, International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395, Japan
Hattori R: Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
Journal Name
Processes
Volume
9
Issue
12
First Page
2193
Year
2021
Publication Date
2021-12-06
ISSN
2227-9717
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Original Submission
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PII: pr9122193, Publication Type: Journal Article
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LAPSE:2023.4577
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https://doi.org/10.3390/pr9122193
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Feb 23, 2023
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