LAPSE:2023.36192
Published Article
LAPSE:2023.36192
Influence of Sputtering Pressure on the Micro-Topography of Sputtered Cu/Si Films: Integrated Multiscale Simulation
July 4, 2023
In this work, an integrated multiscale simulation of magnetron sputtering epitaxy was conducted to study the effect of sputtering pressure on the surface micro-topography of sputtered Cu/Si films. Simulation results indicated that, as the sputtering pressure increased from 0.15 to 2 Pa, the peak energy of the incident energy distribution gradually decreased from 2 to 0.2 eV, which might be mainly due to the gradual decrease in the proportion of deposited Cu atoms whose energy ranged from 2 to 30 eV; the peak angle of the incident polar angle distribution increased from 25° to 35°, which might be attributed to the gradual thermalization of deposited Cu atoms; the growth mode of Cu film transformed from the two-dimensional layered mode to the Volmer-Weber mode. The transformation mechanism of growth mode was analyzed in detail. A comprehensive analysis of the simulation results indicated that incident energy ranging from 2 to 30 eV and incident angle between 10° and 35° might be conducive to the two-dimensional layered growth of sputtered Cu films. This work proposes an application-oriented modeling approach for magnetron sputtering epitaxy.
Record ID
Keywords
Cu/Si film deposition, magnetron sputtering epitaxy, multiscale simulation, sputtered particle transport, surface topography
Subject
Suggested Citation
Zhu G, Han M, Xiao B, Gan Z. Influence of Sputtering Pressure on the Micro-Topography of Sputtered Cu/Si Films: Integrated Multiscale Simulation. (2023). LAPSE:2023.36192
Author Affiliations
Zhu G: School of Mechanical & Electrical Engineering, Hunan City University, Yiyang 413000, China [ORCID]
Han M: School of Mechanical & Electrical Engineering, Hunan City University, Yiyang 413000, China
Xiao B: School of Mechanical & Electrical Engineering, Hunan City University, Yiyang 413000, China
Gan Z: School of Mechanical Science & Engineering, Huazhong University of Science & Technology, Wuhan 430074, China
Han M: School of Mechanical & Electrical Engineering, Hunan City University, Yiyang 413000, China
Xiao B: School of Mechanical & Electrical Engineering, Hunan City University, Yiyang 413000, China
Gan Z: School of Mechanical Science & Engineering, Huazhong University of Science & Technology, Wuhan 430074, China
Journal Name
Processes
Volume
11
Issue
6
First Page
1649
Year
2023
Publication Date
2023-05-28
Published Version
ISSN
2227-9717
Version Comments
Original Submission
Other Meta
PII: pr11061649, Publication Type: Journal Article
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Published Article
LAPSE:2023.36192
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External Link
doi:10.3390/pr11061649
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Version History
[v1] (Original Submission)
Jul 4, 2023
Verified by curator on
Jul 4, 2023
This Version Number
v1
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https://psecommunity.org/LAPSE:2023.36192
Original Submitter
Calvin Tsay
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