Device engineering with proper material integration into perovskite solar cells (PSCs) would extend their durability provided a special care is spent to retain interface integrity during use. In this paper, we propose a method to preserve the perovskite (PSK) surface from solvent-mediated modification and damage that can occur during the deposition of a top contact and furtherly during operation. Our scheme used a hole transporting layer-free top-contact made of Carbon (mostly graphite) to the side of hole extraction. We demonstrated that the PSK/graphite interface benefits from applying a vacuum-curing step after contact deposition that allowed mitigating the loss in efficiency of the solar devices, as well as a full recovery of the electrical performances after device storage in dry nitrogen and dark conditions. The device durability compared to reference devices was tested over 90 days. Conductive atomic force microscopy (CAFM) disclosed an improved surface capability to hole exchange under the graphite contact after vacuum curing treatment.