Abstract
This paper introduces a gallium nitride (GaN) high electron mobility transistor (HEMT)-based matrix converter for motor friendly drive systems. A fast switching characteristic of the GaN devices causes high dv/dt. This increases the importance of noise immunity and the reduction of parasitic components in system design. In addition, the high dv/dt in motor drive systems leads to voltage spike at a motor input terminal and leakage current through a motor chassis. Accordingly, a gate drive circuit consists of devices with a high common mode transient immunity. A printed circuit board was designed to minimize parasitic inductance, which was analyzed by performing simulations. To mitigate the dv/dt of the voltage applied to the motor and the leakage current, a dv/dt filter and a sine-wave filter were utilized as an output filter of the matrix converter. The effectiveness of each filter was verified by driving an induction motor.