LAPSE:2023.20860
Published Article
LAPSE:2023.20860
The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise
March 21, 2023
Abstract
The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.
The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.
Record ID
Keywords
near-field interferences, power spectral density, radiation noise, voltage source inverter, wide-band-gap transistors
Subject
Suggested Citation
Bernacki K, Rymarski Z. The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise. (2023). LAPSE:2023.20860
Author Affiliations
Bernacki K: Department of Electronics, Electrical Engineering and Microelectronics, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100 Gliwice, Poland [ORCID]
Rymarski Z: Department of Electronics, Electrical Engineering and Microelectronics, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100 Gliwice, Poland [ORCID]
Rymarski Z: Department of Electronics, Electrical Engineering and Microelectronics, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100 Gliwice, Poland [ORCID]
Journal Name
Energies
Volume
16
Issue
2
First Page
870
Year
2023
Publication Date
2023-01-12
ISSN
1996-1073
Version Comments
Original Submission
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PII: en16020870, Publication Type: Journal Article
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LAPSE:2023.20860
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https://doi.org/10.3390/en16020870
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Mar 21, 2023
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