Abstract
This paper investigates the degradation mechanism of pressure-sintered silver (s-Ag) film for silicon carbide (SiC) chip assembly with a 2-millimeter-thick copper substrate by means of thermal shock test (TST). Two different types of silver paste, nano-sized silver paste (NP) and nano-micron-sized paste (NMP), were used to sinter the silver film at 300 °C under a pressure of 60 MPa. The mean porosity (p) of the NP and MNP s-Ag films was 2.4% and 8%, respectively. The pore shape of the NP s-Ag was almost spherical, whereas the NMP s-Ag had an irregular shape resembling a peanut shell. After performing the TST at temperatures ranging from −40 to 150 °C, the scanning acoustic tomography (SAT) results suggested that delamination occurs from the edge of the assembly, and the delamination of the NMP s-Ag assembly was faster than that of the NM s-Ag assembly. The NMP s-Ag assembly showed a random delamination, indicating that the delamination speed varies from place to place. The difference in fracture mechanism is discussed based on cross-sectional scanning electron microscope (SEM) observation results after TST and plastic strain distribution results estimated by finite element analysis (FEA) considering pore configuration.