Abstract
This article concerns the indirect thermographic temperature measurement of a die of the semiconductor diode D00-250-10. The article shows how the goal was achieved. The methodology of selecting the point at which thermographic measurements of the temperature of the diode cases were performed is discussed. The method of thermographic measurement of the case temperature and the measuring system used is described. The method of simulations making it possible to obtain the die’s temperature on the basis of thermographic casing temperature measurement is presented. In order to enable a better understanding of the discussed issues, the construction of the diode used and the heat flow equation are described. As a result of the work carried out, the point at which the temperature is closest to the die temperature was indicated on the diode case. It is shown that the difference between the casing temperature and the die temperature does not exceed 2 °C at the point indicated. An indirect measurement of the die’s temperature is carried out for different values of the power dissipated on the die.