LAPSE:2023.9946
Published Article
LAPSE:2023.9946
MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness
February 27, 2023
Abstract
Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (ΦB) and contact resistance are obstacles hampering the fabrication of high-power MoS2 transistors. The electronic transport characteristics of MoS2 transistors with two different contact structures are investigated in detail, including a copper (Cu) metal−MoS2 channel and copper (Cu) metal−TiO2-MoS2 channel. Contact optimization is conducted by adjusting the thickness of the TiO2 interlayer between the metal and MoS2. The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO2 layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics.
Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (ΦB) and contact resistance are obstacles hampering the fabrication of high-power MoS2 transistors. The electronic transport characteristics of MoS2 transistors with two different contact structures are investigated in detail, including a copper (Cu) metal−MoS2 channel and copper (Cu) metal−TiO2-MoS2 channel. Contact optimization is conducted by adjusting the thickness of the TiO2 interlayer between the metal and MoS2. The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO2 layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics.
Record ID
Keywords
contact resistance, MoS2, Schottky barrier, TiO2
Subject
Suggested Citation
Cheng J, He J, Pu C, Liu C, Huang X, Zhang D, Yan H, Chu PK. MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness. (2023). LAPSE:2023.9946
Author Affiliations
Cheng J: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
He J: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Pu C: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Liu C: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Huang X: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Zhang D: Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, X [ORCID]
Yan H: Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, X
Chu PK: Department of Physics, Department of Materials Science & Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China [ORCID]
He J: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Pu C: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Liu C: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Huang X: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Zhang D: Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, X [ORCID]
Yan H: Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, X
Chu PK: Department of Physics, Department of Materials Science & Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China [ORCID]
Journal Name
Energies
Volume
15
Issue
17
First Page
6169
Year
2022
Publication Date
2022-08-25
ISSN
1996-1073
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PII: en15176169, Publication Type: Journal Article
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LAPSE:2023.9946
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https://doi.org/10.3390/en15176169
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