Abstract
Wide band gap (WBG) power electronic devices, such as silicon carbide metal−oxide−semiconductor field-effect transistors (SiC MOSFETs) and gallium−nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied a certain share of the market with rapid momentum, owing to their excellent electrical, mechanical, and thermal properties. The reliability of WBG power electronic devices is inseparable from the reliability of power electronic systems and is a significant concern for the industry and for academia. This review attempts to summarize the recent progress in the failure mechanisms of WBG power electronic semiconductor chips, the reliability of WBG power electronic packaging, and the reliability models for predicting the remaining life of WBG devices. Firstly, the typical structures and dominant failure mechanisms of SiC MOSFETs and GaN HEMTs are discussed. This is followed by a description of power electronic packaging failure mechanisms and available packaging materials for WBG power electronic devices. In addition, the reliability models based on physics-of-failure (including time-dependent dielectric breakdown models, stress−strain models, and thermal cycling models), and data-driven models are introduced. This review may provide useful references for the reliability research of WBG power devices.