LAPSE:2023.36595
Published Article
LAPSE:2023.36595
Growth Process, Structure and Electronic Properties of Cr2GeC and Cr2-xMnxGeC Thin Films Prepared by Magnetron Sputtering
Anton S. Tarasov, Sergey A. Lyaschenko, Mikhail V. Rautskii, Anna V. Lukyanenko, Tatiana A. Andryushchenko, Leonid A. Solovyov, Ivan A. Yakovlev, Olga A. Maximova, Dmitriy V. Shevtsov, Mikhail A. Bondarev, Ilya A. Bondarev, Sergei G. Ovchinnikov, Sergey N. Varnakov
September 20, 2023
The growth and phase formation features, along with the influence of structure and morphology on the electronic, optical, and transport properties of Cr2GeC and Cr2-xMnxGeC MAX phase thin films synthesized by magnetron sputtering technique, were studied. It was found that the Cr:Ge:C atomic ratios most likely play the main role in the formation of a thin film of the MAX phase. A slight excess of carbon and manganese doping significantly improved the phase composition of the films. Cr2GeC films with a thicknesses exceeding 40 nm consisted of crystallites with well-developed facets, exhibiting metallic optical and transport properties. The hopping conduction observed in the Cr2-xMnxGeC film could be attributed to the columnar form of crystallites. Calculations based on a two-band model indicated high carrier concentrations N, P and mobility μ in the best-synthesized Cr2GeC film, suggesting transport properties close to single crystal material. The findings of this study can be utilized to enhance the growth technology of MAX phase thin films.
Keywords
electronic transport, magnetron sputtering, MAX phase, optical spectra, thin film
Subject
Suggested Citation
Tarasov AS, Lyaschenko SA, Rautskii MV, Lukyanenko AV, Andryushchenko TA, Solovyov LA, Yakovlev IA, Maximova OA, Shevtsov DV, Bondarev MA, Bondarev IA, Ovchinnikov SG, Varnakov SN. Growth Process, Structure and Electronic Properties of Cr2GeC and Cr2-xMnxGeC Thin Films Prepared by Magnetron Sputtering. (2023). LAPSE:2023.36595
Author Affiliations
Tarasov AS: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia [ORCID]
Lyaschenko SA: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Rautskii MV: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia [ORCID]
Lukyanenko AV: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia [ORCID]
Andryushchenko TA: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Solovyov LA: Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Yakovlev IA: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia [ORCID]
Maximova OA: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Shevtsov DV: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Bondarev MA: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Bondarev IA: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Ovchinnikov SG: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia [ORCID]
Varnakov SN: Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia; Krasnoyarsk Scientific Center, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia [ORCID]
Journal Name
Processes
Volume
11
Issue
8
First Page
2236
Year
2023
Publication Date
2023-07-25
Published Version
ISSN
2227-9717
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PII: pr11082236, Publication Type: Journal Article
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LAPSE:2023.36595
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doi:10.3390/pr11082236
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Sep 20, 2023
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Sep 20, 2023
 
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Calvin Tsay
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