LAPSE:2023.34406
Published Article
LAPSE:2023.34406
Study on the Relationship between BO−LID and LeTID in Czochralski-Grown Monocrystalline Silicon
April 26, 2023
Abstract
Most research about Light and elevated Temperature Induced Degradation (LeTID) is focused on multicrystalline silicon (mc-Si). In this work, the degradation kinetics of Czochralski-grown monocrystalline silicon (Cz-Si) induced by light at an elevated temperature were studied in detail. The lifetime evolutions over time during (1) light soaking (LS), (2) dark annealing−light soaking (DA−LS), and (3) DA−LS cycling experiments were analyzed. Ratios of the capture coefficients for the electrons and holes (k-values) were used to characterize the possible defects responsible for degradation. We found that the behavior of degradation and recovery under light soaking with or without a dark annealing treatment was mostly like boron−oxygen (BO)-related degradation but gave k-values from 19 to 25. In the DA−LS cycling experiment, the max degradation amplitudes hardly changed from the second cycle, and the k-values decreased with an increase in the cycling number. We then analyzed the possible reactions in Cz-Si and discuss the relationship between BO defects and LeTID.
Most research about Light and elevated Temperature Induced Degradation (LeTID) is focused on multicrystalline silicon (mc-Si). In this work, the degradation kinetics of Czochralski-grown monocrystalline silicon (Cz-Si) induced by light at an elevated temperature were studied in detail. The lifetime evolutions over time during (1) light soaking (LS), (2) dark annealing−light soaking (DA−LS), and (3) DA−LS cycling experiments were analyzed. Ratios of the capture coefficients for the electrons and holes (k-values) were used to characterize the possible defects responsible for degradation. We found that the behavior of degradation and recovery under light soaking with or without a dark annealing treatment was mostly like boron−oxygen (BO)-related degradation but gave k-values from 19 to 25. In the DA−LS cycling experiment, the max degradation amplitudes hardly changed from the second cycle, and the k-values decreased with an increase in the cycling number. We then analyzed the possible reactions in Cz-Si and discuss the relationship between BO defects and LeTID.
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Keywords
BO–LID, Czochralski-grown monocrystalline silicon, k-value, LeTID
Subject
Suggested Citation
Li H, Wang X, Lv F, Wang Y, Cheng S, Zhou C, Wang W. Study on the Relationship between BO−LID and LeTID in Czochralski-Grown Monocrystalline Silicon. (2023). LAPSE:2023.34406
Author Affiliations
Li H: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Wang X: State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China
Lv F: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Wang Y: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Cheng S: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Zhou C: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Wang W: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Wang X: State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China
Lv F: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Wang Y: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Cheng S: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Zhou C: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Wang W: The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Science, Beijing 100190, China
Journal Name
Energies
Volume
13
Issue
22
Article Number
E5961
Year
2020
Publication Date
2020-11-15
ISSN
1996-1073
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PII: en13225961, Publication Type: Journal Article
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LAPSE:2023.34406
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https://doi.org/10.3390/en13225961
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