Abstract
ZnO nanorods are promising materials for many applications, in particular for UV detectors. In the present paper, the properties of high crystal quality individual ZnO nanorods and nanorod arrays grown by the self-catalytic CVD method have been investigated to assess their possible applicationsfor UV photodetectors. X-ray diffraction, Raman spectroscopy and cathodoluminescence investigations demonstrate the high quality of nanorods. The nanorod resistivity and carrier concentration in dark is estimated. The transient photocurrent response of both as grown and annealed at 550 °C nanorod array under UV illumination pulses is studied. It is shown that annealing increases the sensitivity and decreases the responsivity that is explained by oxygen out-diffusion and the formation of near surface layer enriched with oxygen vacancies. Oxygen vacancy formation due to annealing is confirmed by an increase of green emission band intensity.