Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer

Vitali Vasil’evich Starkov; Ekaterina Alexanrovna Gosteva; Dmitry Dmitry Zherebtsov; Maxim Vladimirovich Chichkov; Nikita Valerievich Alexandrov

LAPSE:2023.3245

Published Article

LAPSE:2023.3245

Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer

Vitali Vasil’evich Starkov, Ekaterina Alexanrovna Gosteva, Dmitry Dmitry Zherebtsov, Maxim Vladimirovich Chichkov, Nikita Valerievich Alexandrov

February 22, 2023

Abstract
This review presents the results of the local formation of nanostructured porous silicon (NPSi) on the surface of silicon wafers by anodic etching using a durite intermediate ring. The morphological and crystallographic features of NPSi structures formed on n- and p-type silicon with low and relatively high resistivity have also been investigated. The proposed scheme allows one to experiment with biological objects (for example, stem cells, neurons, and other objects) in a locally formed porous structure located in close proximity to the electronic periphery of sensor devices on a silicon wafer.

Record ID

LAPSE:2023.3245

Keywords

nanostructured surface, nanostructures, porous nanoparticles, synthesis strategies

Subject

Materials

Suggested Citation

Starkov VV, Gosteva EA, Zherebtsov DD, Chichkov MV, Alexandrov NV. Nanoporous Layers and the Peculiarities of Their Local Formation on a Silicon Wafer. (2023). LAPSE:2023.3245

Author Affiliations

Starkov VV: Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Ossipyan Str., 142432 Chernogolovka, Russia
Gosteva EA: Department of the Material Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 4 Leninskiy Prospekt, 119049 Moscow, Russia; Academy of Engineering, Peoples Friendship University of Russia (RUDN University), 6 Mi [ORCID]
Zherebtsov DD: Laboratory for Microparticle Analysis, 117218 Moscow, Russia; Center for Composite Materials, National University of Science and Technology “MISiS”, 119049 Moscow, Russia [ORCID]
Chichkov MV: Department of the Material Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 4 Leninskiy Prospekt, 119049 Moscow, Russia
Alexandrov NV: Department of the Material Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, 4 Leninskiy Prospekt, 119049 Moscow, Russia

Journal Name

Processes

Volume

10

Issue

1

First Page

163

Year

2022

Publication Date

2022-01-14