Abstract
A main challenge towards ensuring improved lifetime performance and reduction of financial risks of photovoltaic (PV) technologies remains the accurate degradation quantification of field systems and the dependency of this performance loss rate to climatic conditions. The purpose of this study is to address these technological issues by presenting a unified methodology for accurately calculating the degradation rate (RD) of PV systems and provide evidence that degradation mechanisms are location dependent. The method followed included the application of data inference and time series analytics, in the scope of comparing the long-term RD of different crystalline Silicon (c-Si) PV systems, installed at different climatic locations. The application of data quality and filtering steps ensured data fidelity for the RD analysis. The yearly RD results demonstrated that the adopted time series analytical techniques converged after 7 years and were in close agreement to the degradation results obtained from indoor standardized procedures. Finally, the initial hypothesis that the RD is location dependent was verified, since the multicrystalline silicon (multi-c-Si) systems at the warm climatic region exhibited higher degradation compared to the respective systems at the moderate climate. For the investigated monocrystalline silicon (mono-c-Si) systems the location-dependency is also affected by the manufacturing technology.