LAPSE:2023.28538
Published Article

LAPSE:2023.28538
Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers
April 12, 2023
Abstract
The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment.
The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment.
Record ID
Keywords
alkaline etching, anisotropic etching, diamond wire-sawn mono-silicon wafer, monocrystalline Si texturing, saw damage gettering, silicon texturing, texturing, thermal treatment
Subject
Suggested Citation
Jung Y, Min K, Bae S, Sim M, Kang Y, Lee H, Kim D. Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers. (2023). LAPSE:2023.28538
Author Affiliations
Jung Y: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Min K: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea; Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
Bae S: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea; National Agenda Research Division, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
Sim M: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Kang Y: Department of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, Korea
Lee H: Department of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, Korea
Kim D: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Min K: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea; Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
Bae S: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea; National Agenda Research Division, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
Sim M: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Kang Y: Department of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, Korea
Lee H: Department of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, Korea
Kim D: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Journal Name
Energies
Volume
13
Issue
24
Article Number
E6610
Year
2020
Publication Date
2020-12-15
ISSN
1996-1073
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Original Submission
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PII: en13246610, Publication Type: Journal Article
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LAPSE:2023.28538
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https://doi.org/10.3390/en13246610
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