LAPSE:2023.26189
Published Article
LAPSE:2023.26189
Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC
March 31, 2023
This paper discusses the benefits of an advanced highly-efficient approach to static and dynamic electrothermal simulations of multicellular silicon carbide (SiC) power MOSFETs. The strategy is based on a fully circuital representation of the device, which is discretized into an assigned number of individual cells, high enough to analyze temperature and current nonuniformities over the active area. The cells are described with subcircuits implementing a simple transistor model that accounts for the utmost influence of the traps at the SiC/SiO2 interface. The power-temperature feedback is emulated with an equivalent network corresponding to a compact thermal model automatically generated by the FANTASTIC tool from an accurate 3D mesh of the component under test. The resulting macrocircuit can be solved by any SPICE-like simulation program with low computational burden and rare occurrence of convergence issues.
Keywords
electrothermal (ET) simulation, finite-element method (FEM), model-order reduction (MOR), multicellular power MOSFET, silicon carbide (SiC)
Suggested Citation
d’Alessandro V, Codecasa L, Catalano AP, Scognamillo C. Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC. (2023). LAPSE:2023.26189
Author Affiliations
d’Alessandro V: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Codecasa L: Department of Electronics, Information and Bioengineering, Politecnico di Milano, 20133 Milan, Italy [ORCID]
Catalano AP: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy [ORCID]
Scognamillo C: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy [ORCID]
Journal Name
Energies
Volume
13
Issue
17
Article Number
E4563
Year
2020
Publication Date
2020-09-03
Published Version
ISSN
1996-1073
Version Comments
Original Submission
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PII: en13174563, Publication Type: Journal Article
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LAPSE:2023.26189
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doi:10.3390/en13174563
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Mar 31, 2023
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