Abstract
Silicon is one of the most used semiconductor materials around the world. This research was conducted on silicon to improve its opto-electrical properties including bandgap and optical conductivity using direct ultrafast pulsed nanostructure formation (DUPNF). The power and frequency of high-intensity picosecond laser pulses were varied, and nanostructures were formed. The optical properties were examined using optical spectroscopy in both VIS and NIR. The structural characteristics were examined using EDX and SEM imaging. It was found that varying the power and frequency of the laser processing caused a change in the bandgap, as well as the structural characteristics of the silicon semiconductor. Increasing the frequency and power showed the formation of nanostructures of silicon and their variation in the properties of the formed nanostructures. The critical breakdown field of the silicon nanostructures was higher than the bulk silicon.