LAPSE:2023.22090v1
Published Article
LAPSE:2023.22090v1
Fabrication and Characterization of Cu2ZnSnSe4 Thin-Film Solar Cells using a Single-Stage Co-Evaporation Method: Effects of Film Growth Temperatures on Device Performances
March 23, 2023
Abstract
Kesterite-structured Cu2ZnSnSe4 (CZTSe) is considered as one of the Earth-abundant and non-toxic photovoltaic materials. CZTSe films have been prepared using a single-step co-evaporation method at a relatively low temperature (i.e., below 500 °C). Due to the volatile nature of tin-selenide, the control over substrate temperature (i.e., growth temperature) is very important in terms of the deposition of high-quality CZTSe films. In this regard, the effects of growth temperatures on the CZTSe film morphology were investigated. The suitable temperature range to deposit CZTSe films with Cu-poor and Zn-rich compositions was 380−480 °C. As the temperature increased, the surface roughness of the CZTSe film decreased, which could improve p/n junction properties and associated device performances. Particularly, according to capacitance-voltage (C-V) and derived-level capacitance profiling (DLCP) measurements, the density of interfacial defects of CZTSe film grown at 480 °C showed the lowest value, of the order of ~3 × 1015 cm−3. Regardless of applied growth temperatures, the formation of a MoSe2 layer was rarely observed, since the growth temperature was not high enough to have a reaction between Mo back contact layers and CZTSe absorber layers. As a result, the photovoltaic (PV) device with CZTSe film grown at 480 °C yielded the best power conversion efficiency of 6.47%. It is evident that the control over film growth temperature is a critical factor for obtaining high-quality CZTSe film prepared by one-step process.
Kesterite-structured Cu2ZnSnSe4 (CZTSe) is considered as one of the Earth-abundant and non-toxic photovoltaic materials. CZTSe films have been prepared using a single-step co-evaporation method at a relatively low temperature (i.e., below 500 °C). Due to the volatile nature of tin-selenide, the control over substrate temperature (i.e., growth temperature) is very important in terms of the deposition of high-quality CZTSe films. In this regard, the effects of growth temperatures on the CZTSe film morphology were investigated. The suitable temperature range to deposit CZTSe films with Cu-poor and Zn-rich compositions was 380−480 °C. As the temperature increased, the surface roughness of the CZTSe film decreased, which could improve p/n junction properties and associated device performances. Particularly, according to capacitance-voltage (C-V) and derived-level capacitance profiling (DLCP) measurements, the density of interfacial defects of CZTSe film grown at 480 °C showed the lowest value, of the order of ~3 × 1015 cm−3. Regardless of applied growth temperatures, the formation of a MoSe2 layer was rarely observed, since the growth temperature was not high enough to have a reaction between Mo back contact layers and CZTSe absorber layers. As a result, the photovoltaic (PV) device with CZTSe film grown at 480 °C yielded the best power conversion efficiency of 6.47%. It is evident that the control over film growth temperature is a critical factor for obtaining high-quality CZTSe film prepared by one-step process.
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Keywords
CZTSe, earth-abundant, growth temperature, kesterite structure
Subject
Suggested Citation
Rehan M, Jeon H, Cho Y, Cho A, Kim K, Cho JS, Yun JH, Ahn S, Gwak J, Shin D. Fabrication and Characterization of Cu2ZnSnSe4 Thin-Film Solar Cells using a Single-Stage Co-Evaporation Method: Effects of Film Growth Temperatures on Device Performances. (2023). LAPSE:2023.22090v1
Author Affiliations
Rehan M: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Renewable Energy Engineering, Faculty of Environmental Technology, University of Science and Technology (UST), 217-Gajeong
Jeon H: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu,
Cho Y: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea [ORCID]
Cho A: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Renewable Energy Engineering, Faculty of Environmental Technology, University of Science and Technology (UST), 217-Gajeong
Kim K: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
Cho JS: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
Yun JH: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Renewable Energy Engineering, Faculty of Environmental Technology, University of Science and Technology (UST), 217-Gajeong
Ahn S: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
Gwak J: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Renewable Energy Engineering, Faculty of Environmental Technology, University of Science and Technology (UST), 217-Gajeong
Shin D: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
Jeon H: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu,
Cho Y: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea [ORCID]
Cho A: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Renewable Energy Engineering, Faculty of Environmental Technology, University of Science and Technology (UST), 217-Gajeong
Kim K: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
Cho JS: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
Yun JH: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Renewable Energy Engineering, Faculty of Environmental Technology, University of Science and Technology (UST), 217-Gajeong
Ahn S: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
Gwak J: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea; Department of Renewable Energy Engineering, Faculty of Environmental Technology, University of Science and Technology (UST), 217-Gajeong
Shin D: Photovoltaics Laboratory, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
Journal Name
Energies
Volume
13
Issue
6
Article Number
E1316
Year
2020
Publication Date
2020-03-12
ISSN
1996-1073
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PII: en13061316, Publication Type: Journal Article
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