Abstract
Solar cell equivalent circuit modelling is usually based on continuous I-V models, with a set of data obtained by analytical expressions. This work proposes an almost discrete novel mathematical method and correspondent electrical model, based on the I-V curve adjustment at every two adjacent points. It is based on the discretisation of any diode model behaviour, such as the 1M5P (also known as 1D5P) or the 1M7P (also known as 2D7P). For this reason, the model is named d1MxP, meaning that it is a discrete (d) model (1M) with x parameters (xP). The modelling methodology validation process uses experimental data already published in the literature. According to the presented results, the proposed method shows increased accuracy when compared to the 1M5P or 1M7P equivalent models. The accuracy on the maximum power point and fill factor determination is relevant, resulting in an improvement of up to 3.34% in the maximum power, up to 5.70% in its voltage and up to 8.20% in its current, for the analysed data. Furthermore, Fill Factor values, have variation from up to 35.98%. The temperature influence on the silicon solar cell is also analysed, to validate the results. The proposed method allows highly accurate curve fitting to the (experimental) points and consequently, to obtain a more accurate model to analyse the performance of solar cells under different conditions.