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LAPSE:2019.0218
Published Article
LAPSE:2019.0218
Promise and Challenges of High-Voltage SiC Bipolar Power Devices
Tsunenobu Kimoto, Kyosuke Yamada, Hiroki Niwa, Jun Suda
January 31, 2019
Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.
Keywords
(merged pin-Schottky) diodes, carrier lifetime, conductivity modulation, power device, silicon carbide
Suggested Citation
Kimoto T, Yamada K, Niwa H, Suda J. Promise and Challenges of High-Voltage SiC Bipolar Power Devices. (2019). LAPSE:2019.0218
Author Affiliations
Kimoto T: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan
Yamada K: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan
Niwa H: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan
Suda J: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan
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Journal Name
Energies
Volume
9
Issue
11
Article Number
E908
Year
2016
Publication Date
2016-11-03
Published Version
ISSN
1996-1073
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Original Submission
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PII: en9110908, Publication Type: Journal Article
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LAPSE:2019.0218
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doi:10.3390/en9110908
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Jan 31, 2019
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CC BY 4.0
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[v1] (Original Submission)
Jan 31, 2019
 
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Jan 31, 2019
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Original Submitter
Calvin Tsay
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