LAPSE:2023.35471
Published Article
LAPSE:2023.35471
An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications
April 28, 2023
This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A−40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.
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Keywords
comparative analysis, GaN, power electronics, power MOSFET, SiC
Suggested Citation
Prado EO, Bolsi PC, Sartori HC, Pinheiro JR. An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications. (2023). LAPSE:2023.35471
Author Affiliations
Prado EO: Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil; Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil [ORCID]
Bolsi PC: Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil; Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil [ORCID]
Sartori HC: Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil [ORCID]
Pinheiro JR: Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil; Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil [ORCID]
Bolsi PC: Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil; Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil [ORCID]
Sartori HC: Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil [ORCID]
Pinheiro JR: Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil; Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil [ORCID]
Journal Name
Energies
Volume
15
Issue
14
First Page
5244
Year
2022
Publication Date
2022-07-20
Published Version
ISSN
1996-1073
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Original Submission
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PII: en15145244, Publication Type: Journal Article
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LAPSE:2023.35471
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doi:10.3390/en15145244
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[v1] (Original Submission)
Apr 28, 2023
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Apr 28, 2023
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