LAPSE:2018.0454
Published Article
LAPSE:2018.0454
ZnS/SiO₂ Passivation Layer for High-Performance of TiO₂/CuInS₂ Quantum Dot Sensitized Solar Cells
Hee-Je Kim, Jin-Ho Bae, Hyunwoong Seo, Masaharu Shiratani, Chandu Venkata Veera Muralee Gopi
September 19, 2018
Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO₂ blocking layer was deposited on TiO₂/CuInS₂ QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO₂/CuInS₂/ZnS/SiO₂ based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO₂/CuInS₂ (2.15%) and TiO₂/CuInS₂/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO₂ passivation layer on TiO₂/CuInS₂ suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.
Keywords
Charge recombination, Passivation layer, QDSSCs, ZnS/SiO2
Subject
Suggested Citation
Kim HJ, Bae JH, Seo H, Shiratani M, Venkata Veera Muralee Gopi C. ZnS/SiO₂ Passivation Layer for High-Performance of TiO₂/CuInS₂ Quantum Dot Sensitized Solar Cells. (2018). LAPSE:2018.0454
Author Affiliations
Kim HJ: School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea
Bae JH: School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea
Seo H: Department of Energy Engineering, Inje University, 197 Inje-ro, Gimhae-si, Gyeongsangnamdo 50834, Korea
Shiratani M: Department of Electronics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
Venkata Veera Muralee Gopi C: School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea
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Journal Name
Energies
Volume
11
Issue
8
Article Number
E1931
Year
2018
Publication Date
2018-07-24
Published Version
ISSN
1996-1073
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Original Submission
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PII: en11081931, Publication Type: Journal Article
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LAPSE:2018.0454
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doi:10.3390/en11081931
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Sep 19, 2018
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CC BY 4.0
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Sep 19, 2018
 
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Original Submitter
Calvin Tsay
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