LAPSE:2023.35830
Published Article
LAPSE:2023.35830
Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives
Salvatore Musumeci, Vincenzo Barba
May 24, 2023
High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.
Keywords
cascode, depletion mode, enhancement mode, GaN FET, HEMT, LIDAR, SiC MOSFET, super-junction MOSFET, WBG
Suggested Citation
Musumeci S, Barba V. Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives. (2023). LAPSE:2023.35830
Author Affiliations
Musumeci S: Dipartimento Energia “Galileo Ferraris”, Politecnico di Torino, 10129 Torino, Italy [ORCID]
Barba V: Dipartimento Energia “Galileo Ferraris”, Politecnico di Torino, 10129 Torino, Italy
Journal Name
Energies
Volume
16
Issue
9
First Page
3894
Year
2023
Publication Date
2023-05-04
Published Version
ISSN
1996-1073
Version Comments
Original Submission
Other Meta
PII: en16093894, Publication Type: Journal Article
Record Map
Published Article

LAPSE:2023.35830
This Record
External Link

doi:10.3390/en16093894
Publisher Version
Download
Files
[Download 1v1.pdf] (3.6 MB)
May 24, 2023
Main Article
License
CC BY 4.0
Meta
Record Statistics
Record Views
97
Version History
[v1] (Original Submission)
May 24, 2023
 
Verified by curator on
May 24, 2023
This Version Number
v1
Citations
Most Recent
This Version
URL Here
https://psecommunity.org/LAPSE:2023.35830
 
Original Submitter
Calvin Tsay
Links to Related Works
Directly Related to This Work
Publisher Version