LAPSE:2023.23227
Published Article
LAPSE:2023.23227
Electrothermal Model of SiC Power BJT
Joanna Patrzyk, Damian Bisewski, Janusz Zarębski
March 27, 2023
This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel−Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.
Keywords
BJT, Modelling, self-heating, silicon carbide, SPICE
Suggested Citation
Patrzyk J, Bisewski D, Zarębski J. Electrothermal Model of SiC Power BJT. (2023). LAPSE:2023.23227
Author Affiliations
Patrzyk J: Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland
Bisewski D: Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland
Zarębski J: Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland
Journal Name
Energies
Volume
13
Issue
10
Article Number
E2617
Year
2020
Publication Date
2020-05-21
Published Version
ISSN
1996-1073
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PII: en13102617, Publication Type: Journal Article
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LAPSE:2023.23227
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doi:10.3390/en13102617
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Mar 27, 2023
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