LAPSE:2023.17351
Published Article
LAPSE:2023.17351
Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs
March 6, 2023
Abstract
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.
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Keywords
boost converter, GaN, gate driver, HEMT, Ohmic contact, p-GaN gate, Schottky contact, short circuit, TSEP
Subject
Suggested Citation
Borghese A, Di Costanzo A, Riccio M, Maresca L, Breglio G, Irace A. Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs. (2023). LAPSE:2023.17351
Author Affiliations
Borghese A: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy [ORCID]
Di Costanzo A: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Riccio M: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy [ORCID]
Maresca L: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Breglio G: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy [ORCID]
Irace A: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy [ORCID]
Di Costanzo A: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Riccio M: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy [ORCID]
Maresca L: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Breglio G: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy [ORCID]
Irace A: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy [ORCID]
Journal Name
Energies
Volume
14
Issue
23
First Page
8055
Year
2021
Publication Date
2021-12-02
ISSN
1996-1073
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Original Submission
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PII: en14238055, Publication Type: Journal Article
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LAPSE:2023.17351
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https://doi.org/10.3390/en14238055
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[v1] (Original Submission)
Mar 6, 2023
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