Abstract
The aim of the proposed paper is the development of an electro-thermal model of semiconductor component using an indirect modelling approach. The approach is based on the integration of the component’s electrical properties considering non-linear behavior of a V-A characteristic. In this way, the identification of semiconductor material properties considering non-linear dependencies and semiconductor volume is provided. The main aim of the presented approach is simplification of the electro−thermal interaction within finite-element modelling of the semiconductor components. In this way, it is possible to omit more complex boundary definitions and the setting of the semiconductor-based physics. The proposed methodology is presented within the development of a simulation model based on a small high-frequency rectifying diode, taking into account its geometric dimensions and the internal arrangement of its structure. Simulation was performed as a transient analysis, while the results from the steady-state operation for various operational conditions were compared to experimental measurements. Comparison between simulation and experiments is within 5% of the relative error. The achieved results represent appropriate accuracy of model behavior compared to the real operation.