Time of Flight Size Control of Carbon Nanoparticles Using Ar+CH4 Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

Sung Hwa Hwang; Kazunori Koga; Yuan Hao; Pankaj Attri; Takamasa Okumura; Kunihiro Kamataki; Naho Itagaki; Masaharu Shiratani; Jun-Seok Oh; Susumu Takabayashi; Tatsuyuki Nakatani

LAPSE

Living Archive for Process Systems Engineering

LAPSE:2021.0697

Published Article

LAPSE:2021.0697

Time of Flight Size Control of Carbon Nanoparticles Using Ar+CH4 Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

Sung Hwa Hwang, Kazunori Koga, Yuan Hao, Pankaj Attri, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani, Jun-Seok Oh, Susumu Takabayashi, Tatsuyuki Nakatani

August 2, 2021

As the application of nanotechnology increases continuously, the need for controlled size nanoparticles also increases. Therefore, in this work, we discussed the growth mechanism of carbon nanoparticles generated in Ar+CH4 multi-hollow discharge plasmas. Using the plasmas, we succeeded in continuous generation of hydrogenated amorphous carbon nanoparticles with controlled size (25−220 nm) by the gas flow. Among the nanoparticle growth processes in plasmas, we confirmed the deposition of carbon-related radicals was the dominant process for the method. The size of nanoparticles was proportional to the gas residence time in holes of the discharge electrode. The radical deposition developed the nucleated nanoparticles during their transport in discharges, and the time of flight in discharges controlled the size of nanoparticles.

Record ID

LAPSE:2021.0697

Keywords

carbon nanoparticle, coagulation, optical emission spectroscopy, plasma chemical vapor deposition

Subject

Materials

Suggested Citation

Hwang SH, Koga K, Hao Y, Attri P, Okumura T, Kamataki K, Itagaki N, Shiratani M, Oh JS, Takabayashi S, Nakatani T. Time of Flight Size Control of Carbon Nanoparticles Using Ar+CH4 Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method. (2021). LAPSE:2021.0697

Author Affiliations

Hwang SH: Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
Koga K: Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan; Center for Novel Science Initiatives, National Institutes of Natural Science, Tokyo 105-0001, Japan [ORCID]
Hao Y: Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
Attri P: Center of Plasma Nano-Interface Engineering, Kyushu University, Fukuoka 819-0395, Japan [ORCID]
Okumura T: Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
Kamataki K: Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
Itagaki N: Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
Shiratani M: Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
Oh JS: Graduate School of Engineering, Osaka City University, Osaka 558-8585, Japan [ORCID]
Takabayashi S: National Institute of Technology, Ariake College, Fukuoka 836-8585, Japan
Nakatani T: Institute of Frontier Science and Technology, Okayama University of Science, Okayama 700-0005, Japan

Journal Name

Processes

Volume

9

Issue

1

First Page

pr9010002

Year

2020

Publication Date

2020-12-22