LAPSE:2018.0950
Published Article
LAPSE:2018.0950
Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys
November 27, 2018
The conversion efficiency of thin-film silicon solar cells needs to be improved to be competitive with respect to other technologies. For a more efficient use of light across the solar spectrum, multi-junction architectures are being considered. Light-management considerations are also crucial in order to maximize light absorption in the active regions with a minimum of parasitic optical losses in the supportive layers. Intrinsic and doped silicon oxide alloys can be advantageously applied within thin-film Si solar cells for these purposes. Intrinsic a-SiOx:H films have been fabricated and characterized as a promising wide gap absorber for application in triple-junction solar cells. Single-junction test devices with open circuit voltage up to 950 mV and ~1 V have been demonstrated, in case of rough and flat front electrodes, respectively. Doped silicon oxide alloys with mixed-phase structure have been developed, characterized by considerably lower absorption and refractive index with respect to standard Si-based films, accompanied by electrical conductivity above 10−5 S/cm. These layers have been successfully applied both into single-junction and micromorph tandem solar cells as superior doped layers with additional functionalities.
Record ID
Keywords
mixed-phase materials, plasma enhanced chemical vapor deposition (PECVD), silicon oxide, solar cells, thin-film Si
Subject
Suggested Citation
Mercaldo LV, Usatii I, Delli Veneri P. Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys. (2018). LAPSE:2018.0950
Author Affiliations
Mercaldo LV: Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Center, P.le E. Fermi 1, Portici 80055, Italy
Usatii I: Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Center, P.le E. Fermi 1, Portici 80055, Italy
Delli Veneri P: Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Center, P.le E. Fermi 1, Portici 80055, Italy
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Usatii I: Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Center, P.le E. Fermi 1, Portici 80055, Italy
Delli Veneri P: Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Center, P.le E. Fermi 1, Portici 80055, Italy
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Journal Name
Energies
Volume
9
Issue
3
Article Number
E218
Year
2016
Publication Date
2016-03-18
Published Version
ISSN
1996-1073
Version Comments
Original Submission
Other Meta
PII: en9030218, Publication Type: Journal Article
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Published Article
LAPSE:2018.0950
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External Link
doi:10.3390/en9030218
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Version History
[v1] (Original Submission)
Nov 27, 2018
Verified by curator on
Nov 27, 2018
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v1
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URL Here
https://psecommunity.org/LAPSE:2018.0950
Original Submitter
Calvin Tsay
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