LAPSE:2018.0474
Published Article
LAPSE:2018.0474
Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dIDS/dt
September 20, 2018
In this paper, a method of extracting the junction temperature based on the turn-on current switching rate (dIDS/dt) of silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) is proposed. The temperature dependence of dIDS/dt is analyzed theoretically, and experimentally to show that dIDS/dt increases with the rising junction temperature. In addition, other factors affecting dIDS/dt are also discussed by using the fundamental device physics equations and experiments. The result shows that the increase of the DC-link voltage VDC, the external gate resistance RG-ext, and the decrease of the driving voltage VGG can increase the temperature sensitivity of the dIDS/dt. A PCB (printed circuit board) Rogowski coil measuring circuit based on the fact that the SiC MOSFET chip temperature and dIDS/dt is estimated in a linear way is designed to obtain the junction temperature. The experimental results demonstrate that the proposed junction temperature extracting is effective.
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Keywords
junction temperature extraction, silicon carbide, switching transients, thermo-sensitive electrical parameter
Subject
Suggested Citation
Huang D, Tan G, Geng C, Zhang J, Liu C. Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dIDS/dt. (2018). LAPSE:2018.0474
Author Affiliations
Huang D: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
Tan G: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China; Xuzhou China Ming Driver and Automation Co. Ltd., Xuzhou 221112, China
Geng C: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China; Xuzhou China Ming Driver and Automation Co. Ltd., Xuzhou 221112, China [ORCID]
Zhang J: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
Liu C: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
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Tan G: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China; Xuzhou China Ming Driver and Automation Co. Ltd., Xuzhou 221112, China
Geng C: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China; Xuzhou China Ming Driver and Automation Co. Ltd., Xuzhou 221112, China [ORCID]
Zhang J: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
Liu C: School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
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Journal Name
Energies
Volume
11
Issue
8
Article Number
E1951
Year
2018
Publication Date
2018-07-27
Published Version
ISSN
1996-1073
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Original Submission
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PII: en11081951, Publication Type: Journal Article
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Published Article
LAPSE:2018.0474
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doi:10.3390/en11081951
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[v1] (Original Submission)
Sep 20, 2018
Verified by curator on
Sep 20, 2018
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v1
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https://psecommunity.org/LAPSE:2018.0474
Original Submitter
Calvin Tsay
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